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A mathematical model for Surface Potential of a Heterojunction Gate-All-Around Tunneling FET is proposed in this paper. 2-D Poisson equation in cylindrical coordinates is solved to get the potential profile. The value of threshold voltage is further calculated. A broken gap GaSb/InAs alignment has been taken into consideration in this model. This paper includes the effect of gate bias, radius of the...
In this paper, a GaSb/InAs heterojunction Gate All Around Tunnel FET has been investigated. Broken gap alignment has been used in order to achieve more band-to-band tunneling and hence the ION of the device is increased. The electrical characteristics of the device such as surface potential, electric filed, energy band and drain current have been studied by using the device simulator. The characteristics...
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