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A fully integrated linear power amplifier (PA) for 5 GHz WLAN application has been realized in the OMMIC 0.2 mum AlGaAs/InGaAs/GaAs PHEMT process. The single-ended two-stage power amplifier uses on-chip inductors and capacitors for input, interstage and output matching. Under a single supply voltage of +3.5 V, this power amplifier exhibits linear output power of 26.9 dBm (P1dB), small signal gain...
A monolithic integrated linear power amplifier (PA) for 5GHz WLAN application has been realized in 0.35mum-SiGe BiCMOS technology. The single-ended 3-stage power amplifier uses on-chip inductors and bond-wire inductance for input and interstage matching. Under a single supply voltage of +3.3V, the SiGe HBT MMIC power amplifier exhibits linear output power of 26.4dBm (P1dB), small signal gain of 24...
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