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In this study, a new type of hybrid solar cell based on a heterojunction between poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and vertically aligned n-type GaAs nanowire (NW) arrays is investigated. The GaAs NW arrays are fabricated by directly performing the nano-etching of GaAs wafer with spun-on SiO2 nanospheres as the etch mask through inductively coupled plasma reactive...
Large-area GaAs nanowires are fabricated by using SiO2 nanoparticles as a mask. SiO2 nanoparticle monolayer is spin-coated on the GaAs substrate and GaAs nanowires are etched by induced-coupled plasma reactive ion etcher.
As a result of the ability to tune the band-gap of III-V compound semiconductor materials to match the solar spectrum, solar cells made from II -V materials such as GaAs and InGaP have unsurpassed conversion efficiencies. However, after the deposition of the solar cell film, the substrate is of no further use for its performance. The reduction of the costs of III-V semiconductor materials and the...
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