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This paper presents a high-frequency half-bridge driver for GaN HEMTs with bandgap reference comparator clamping (BGRCC). Due to the characteristics of GaN HEMTs, the high-side supply voltage must be clamped to prevent it from exceeding the voltage limits in half-bridge configuration. The BGRCC scheme is simple and effective with low power consumption, which can adaptively keep the high-side supply...
The Active Clamp Flyback (ACF) converter utilizing Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) is expected to achieve high switching frequency and high efficiency for system miniaturization in AC-DC adapter applications. Due to high switching speed and large reverse conduction loss of GaN devices, the improper dead time length in a high-frequency ACF converter can lead to severe...
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