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This work presents the design and implementation of a flat-gain, efficient and wideband stacked distributed power amplifier (SDPA) in 0.13um CMOS technology. To obtain high output swing along with a reasonable gain, a four-transistor stack is utilized in four sections. Voltage alignment at the drain of each device in the stack is obtained by allowing a small AC swing at the gate due to voltage division...
This work presents the design and implementation of a fully integrated broadband medium power stacked amplifier in 65 nm bulk CMOS. The amplifier topology utilizes three NMOS stack and three PMOS stack to increase the output voltage swing along with the output impedance. The load impedance is further optimized with a resistive feedback which not only results in broadband operation but also avoids...
This paper presents a stacked inverter-based amplifier in a commercial 65nm CMOS technology. The proposed amplifier, based on an inverter, uses stacking to achieve high output swing and distributed inductive peaking to obtain ultra-wide bandwidth. Furthermore, the proposed topology is generalized for more stacked transistors for high output swing requirement which then utilizes distributive peaking...
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