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We review and discuss the latest developments and technology options for 45nm node and below, with scaled planar bulk MOSFETs and MuGFETs as emerging devices. One of the main metal gate (MG) candidates for scaled CMOS technologies are fully silicided (FUSI) gates. In this work, by means of a selective and controlled poly etch-back integration process, dual work-function Ni-based FUSI/HfSiON CMOS circuits...
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