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A high speed high dynamic range track-and-hold amplifier (THA) using 0.18 µm SiGe process is presented in this paper. A differential feedthrough cancellation technique is proposed to enhance the hold-mode isolation and linearity of the THA. The measured spurious free dynamic range (SFDR) is up to 55 dB with a sampling rate of 16 GS/s. The measured input bandwidth is up to 8 GHz with a hold-mode isolation...
A 2-to-67 GHz distributed N-type complementary metal oxide semiconductor (NMOS)-heterojunction bipolar transistor (HBT) Darlington mixer using 0.18 µm SiGe BiCMOS process is presented in this paper. A distributed topology is adopted to achieve broad RF bandwidth with good radio frequency (RF) and local oscillation (LO) input return losses. A hybrid NMOS-HBT Darlington cell is utilized in the mixer...
A monolithic dc-31 GHz distributed amplifier (DA) using cascode heterojunction bipolar transistor (HBT) — n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) gain cell in 0.18 μm SiGe process is presented in this paper. A HBT-NMOS cascode topology is employed as the gain stage of the DA due to its high cutoff frequency of the input matching transmission line and low Miller effect...
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