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A K-band high conversion gain high efficiency frequency quadrupler using a GaAs E/D-mode pseudomorphic high electron-mobility transistor (PHEMT) technology is presented in this paper. The frequency quadrupler comprises two cascade frequency doublers. The frequency doubler employs a modified common-gate (CG)/common-source (CS) topology to enhance the second harmonic efficiently. The phase-shifter networks...
Bandwidth enhancement of cascode distributed amplifiers (DAs) is described in this paper. A modified m-derived network and inductive peaking technique are adopted to enhance the bandwidth of the DAs. The cascode gain cell is employed to improve gain bandwidth. 2- and 8-stage fully integrated DAs in a 0.5-µm GaAs enhancement- and depletion-mode high electron-mobility transistor (E/D-mode HEMT) technology...
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