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In this contribution, an active high harmonic suppression x8 frequency multiplier using depletion-mode mHEMT devices and its design procedure are presented. The realized circuit exhibits 3 dB conversion gain in the 86.4 ÷ 91.2 GHz output frequency range, with 6 dBm output power. An harmonic suppression higher than 32 dBc has been achieved. The whole chip current consumption is 125 mA, occupying an...
The the design, realization and testing of a Q-band and a W-band LNA (Low Noise Amplifier) utilizing the 70nm mHEMT (metamorphic High Electron Mobility Transistor) foundry process by OMMIC, are reported. Details on measurement set-up and obtained performances are presented.
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