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As the stress coupling in organic Flip Chip packages become more critical due to the introduction of brittle materials and continued pitch shrink, various technologies are emerging to manage or reduce thermal mismatch stresses. In this regard pillar bumps on the die side have had a good start as they also address underfill flow at shrunk pitch as well as electromigration during operation. Pillar bumps...
We designed a new terahertz detector using a superconducting tunnel junction. The detector is composed of a small junction (~2 mum in diameter) coupled to a thin superconductor film with a large absorbing area (~200 mum square). The noise equivalent power (NEP) of the optimized detector is expected to be in the order of 10-18 W/radicHz.
Chemical vapor deposition of MnOx (CVD-MnOx) was performed on blanket substrates as well as patterned interconnect structures. A conformal layer of MnOx was formed by the MnOx on SiO2 within a contact hole with a uniform thickness of 3 to 4 nm. Excellent diffusion barrier property was obtained after annealing at 400 degC. In contrast, the CVD-MnOx on Cu formed solid solution with Cu. The solute Mn...
We describe a newly developed evolutional nanoimprint technique, ie., a direct contact printing (DCP) method, for applications to fabricate flexible displays. This printing method is developed to form micro-patterns on a substrate by using functional liquid inks, such as organic polymer ink. Moreover, based on the preliminary study, we fabricated part of fast response liquid crystal (LC) devices with...
A cell-based forward body-biasing technique to suppress the global process variation and its design flow are proposed. Latch-up free operation is guaranteed by embedded current source cells and limiter cells even when supply voltage is 1.2 V with small area overhead. By applying this technique to a media processor, the worst-case delay is reduced by 20% without sacrificing the maximum leakage spec.
We present a new global shutter CMOS imager with 2 transistors per pixel. The first transistor is a ring gate transistor for accumulating holes that modulate threshold voltage. The second one is a transfer gate transistor that transfers holes from a PD to the ring gate transistor at the same time in all pixels. Simple structure allows us to realize 5.4 um pixel pitch, kTC noise free, and global shutter...
This paper describes InP-HEMT MMICs for 94 GHz band passive millimeter-wave (PMMW) imaging sensors. In order to obtain high sensitivity with a single MMIC, we developed a new structure in MMIC to suppress unwanted feedback power that causes amplifier instability. The structure is also suited for flip chip bonding (FCB). The measured sensitivity of the MMIC was over 500,000 V/W at the frequency of...
A high-density, high-temperature, ablation plasma has been efficiently produced by the irradiation of an intense pulsed ion beam onto solid targets. Properties of such the target plasma has been diagnosed by using time-resolved spectroscopy and high speed photography. Electron temperature and density of the plasma was estimated to be ∼ 0.8 eV and ∼ 1018 cm−3, respectively. By using such the ablation...
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