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We investigated annealing temperature $T_{a}$ dependence of tunnel magnetoresistance (TMR) ratio and magnetic properties for perpendicular-anisotropy (CoFe)100–XBX/MgO magnetic tunnel junctions (MTJs) with single (CoFe)100–XBX/MgO interface (s-MTJ) and double CoFeB–MgO interface (d-MTJ) structures with various boron compositions X. High TMR ratio over 100% was observed in the s-MTJ with $X= 35$ ...
We have developed a perpendicular-anisotropy magnetic tunnel junction (p-MTJ) stack with CoFeB free layer and Co/Pt multilayer based synthetic ferrimagnetic (SyF) pinned layer that withstand annealing at a temperature up to 420°C (that compatible with CMOS BEOL process) by controlling boron diffusion. We demonstrated the 10 nmφ p-MTJ with double CoFeB/MgO interface tolerable against 400°C annealing...
Chemical vapor deposition of MnOx (CVD-MnOx) was performed on blanket substrates as well as patterned interconnect structures. A conformal layer of MnOx was formed by the MnOx on SiO2 within a contact hole with a uniform thickness of 3 to 4 nm. Excellent diffusion barrier property was obtained after annealing at 400 degC. In contrast, the CVD-MnOx on Cu formed solid solution with Cu. The solute Mn...
Three-in. size LiCaAlF 6 (LiCAF) single crystals were successfully grown by the Czochralski method. Both measurements of the transmission spectra in the VUV regions and the X-ray rocking curve analysis showed that the crystallinity of LiCAF single crystal was improved by the annealing. Optical absorption measurements in the UV/VIS spectral regions following X-ray irradiation were performed...
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