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The direct elaboration of graphene by molecular beam epitaxy (MBE) has been studied, using a solid carbon source. Successful growth has been achieved on both the carbon and silicon terminated faces of silicon carbide substrates in the temperature range 1000–1100 °C, as confirmed by low energy electron diffraction (LEED) and X‐ray photoemission spectroscopy (XPS) analysis. Atomic force microscopy (AFM)...
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