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An AlGaN/GaN based field effect transistor (FET) has been designed, fabricated, and used as a resistive mixer for heterodyne detection in the 140-220 GHz frequency range. A double VNA heterodyne measurement setup has been used in an on-wafer configuration to accurately quantify the incident radiation absorbed by the device. The appropriate selection of optimum biasing conditions for minimum conversion...
A TEM horn antenna is integrated with a uni-travelling-carrier photodiode. Its radiation pattern is measured from 280 to 540 GHz thanks to a 1.55 μm photomixing set-up and a sub-harmonic mixer. The direction the main lobe shifts to a lower incidence when the frequency is increased.
A wireless transmission system with a remote-supplied hotspot is demonstrated working up to gigabit data rates. The emission uses a 200 GHz carrier frequency, generated using an 1.55 μm photomixer composed of an unitravelling carrier photodiode monolithically integrated with a wide bandwidth antenna. The receiver is based on a heterodyne mixing and an AM detector. Eye diagram analysis at 1.0625 Gbit/s...
Photomixers that consist in a uni-travelling-carrier photodiode (UTC-PD) integrated with a TEM horn antenna (TEM-HA) have been realized and characterized.
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