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This paper presents a comparative evaluation of the loss and thermal performance of two advanced three-level inverter topologies, namely the partial silicon carbide (SiC) T-Type and the Hybrid-neutral-point-clamped (NPC), both of which are aimed at reducing the high switching losses associated with a conventional Si T-Type inverter. The first solution directly replaces the 1200 V primary Si IGBT switches...
This paper presents a comparative evaluation of the loss and thermal performance of two advanced three-level inverter topologies, namely the SiC based T-Type and the Hybrid-NPC, both of which are aimed at reducing the high switching losses associated with a conventional Si based T-Type inverter. The first solution directly replaces the 1200V primary Si IGBT switches with lower loss 1200V SiC MOSFETs...
This paper gives a comprehensive comparison of two promising silicon carbide (SiC) switching devices, i.e. normally-off SiC MOSFET and a normally-on SiC JFET, as alternatives to a conventional state of the art Si IGBT. The comparison uses datasheet information to determine conduction losses, switching transition measurements for switching loss calculations and electrical power measurements in a boost...
In this paper, a 3kW boost converter for PV applications using SiC devices is introduced. Main focus is to operate the converter over a wide range of switching frequency and to analyze the main loss distributors as well as the efficiency. The switching element is a recently introduced normally-on SiC JFET and a SiC diode is used. The SiC JFET has been evaluated on an optimized double pulse test circuit...
In renewable energy applications power conversion efficiency is major concern. This is especially true for grid-tie energy storage systems based on bidirectional dc-dc and dc-ac converters where power flows through these system components. Latest developments in power semiconductors technology significantly reduced switching and conduction losses in dc-dc and dc-ac converters allowing efficiencies...
This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247 package, has a major influence on the switching energy. Crucial design guidelines for an improved double...
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