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A bidirectional DC-DC converter with high voltage gain and wide input and output voltage range is presented. The input voltage range is 30 V to 60 V and the output voltage range is 100 V to 400 V. The nominal power is 10 kW. The converter is based on a Dual Active Bridge in which the voltage range has been extended with a tap changer between the transformer and the high voltage H-bridge.
This paper presents a programmable gate driver unit for power semiconductors such as IGBTs and MOSFETs which allows to adjust the gate voltage and gate resistance for turn-on and turn-off of the power semiconductor independently. As properties of the gate driver have a major influence on the switching behavior of power semiconductors and thus on switching losses and EMI, it is highly desirable to...
In this paper a flexible double pulse test bench for switching loss characterization of power semiconductors is presented. It allows the characterization of switching losses for conventional power semiconductors such as IGBTs and power MOSFETs, but also for modern fast switching wide bandgap devices. Contrary to alternative test bench topologies, test voltage and current can be adjusted independently...
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