The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A compact model for small-signal equivalent circuit of DG-MOSFETs is presented. The intrinsic parameters are obtained from DC analytic compact model. This DC model allows determining the mobile charge inside the transistor channel, from which the intrinsic parameters are derived. Additionally, the extrinsic capacitances are calculated and included into the model. This compact small-signal model allows...
In this work we examine the electrical behavior of thin (~10 nm) SiO2/TiO2 gate insulator stacks in MOS capacitors that have undergone multiple hard breakdown events. The post-breakdown current is modeled using a simple equivalent electrical circuit consisting of a diode with series and parallel resistances. We show that the current flowing through the non-damaged oxide area still plays a significant...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.