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An analytical model is proposed in this paper to calculate the switching loss of low voltage enhancement mode Gallium Nitride high electron mobility transistors (eGaN HEMTs). The switching process is illustrated in detail. The switching loss is obtained by solving the equivalent circuits during the switching transition. A good agreement is shown between the analytical model and Spice simulation results...
System-level power analysis is commonly used in modern SoC design processes to evaluate power consumption at early design phases. With the increasing variations in manufacturing, the statistical characteristics of parameters are also incorporated in the state-of-the-art methods. However, the spatial correlation between modules still remains as a challenge for system-level statistical power analysis...
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