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In the paper, an electromagnetic interference (EMI) model for a two-stage cascaded boost converter is presented to distinguish its noise sources. To illustrate the effects of switching speeds on EMI generation potential, the relationships between the time domain and the frequency domain with all-SiC and SiC–Si device combinations are provided. It is found that the voltage ripples and spikes at turn-OFF...
In this paper, 1-MHz isolated bipolar halfbridge SiC MOSFET gate drivers using GaN semiconductors are proposed. To realise the 1 MHz switching capability of the gate driver for SiC MOSFET, the half-bridge topology is used in conjunction with Digital Isolators. The design of the gate drivers takes into consideration the capability of driving SiC MOSFET at 1 MHz switching with less driving power loss...
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