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The SnSbNi solder pastes were reflowed at 270°C and 280°C between the MvpLED chip and the AlN ceramic substrate, and then the SnSbNi solder joints were aged respectively at 200°C for 1h and at 250°C for 3h. The interfacial microstructure and constituents were investigated by SEM and EDS. After the reflow reactions, a thin layer of IMCs was formed at the chip/solder and solder/substrate interfaces,...
The die bonding technology played a key role during the heat dissipating process in the high power LED packaging. At present, many manufacturers were confused about which kind of bonding technology they should choose. In this study, the high power LED devices from Cree and Lumileds were employed to study their die-bonding technologies. For the tested Cree's products, the initial interface had few...
The lateral current flow in the lateral light emitting diode can confine carrier distribution near the top surface, and thus relatively stronger direct band gap emission is observed.
In this paper, the reliability and degradation mechanisms of high-brightness LEDs were studied, which were prepared by Cree and currently available on the market. Results revealed that operating currents had an important effect on the service performance of treated LEDs. Only at 350mA the tested LEDs had a good performance; at 750mA and 1000mA, they had the significant degradation; at 2000mA, they...
Metal bonding is the most promising die-attach process in high power LED package, which has lower thermal resistance and higher device reliability in comparison with the traditional insulation paste or silver paste die-attach processes. In this project, the eutectic bonding technology, flux-eutectic bonding technology and solder-bonding technology were studied, and the interfacial microstructure was...
A systematic study is performed to optimize aluminum nitride (AlN) epilayers grown on (0001) sapphire by metal-organic vapor-phase epitaxy. Specifically, the impact of the AlN nucleation conditions on the crystalline quality and surface morphology of AlN epilayers is studied. Atomic force microscopy (AFM) and x-ray diffraction (XRD) results reveal that the nucleation layer plays a critical role in...
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