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Silicon substrates can be strategically isolated or unified among tiers in a through-silicon-via (TSV)-based 3-D integrated circuit (IC) structure, for the suppression of intertier substrate noise coupling or the reduction of grounding impedance of silicon substrates as a whole, respectively. A two-tier 3-D IC demonstrator in a 130-nm CMOS technology was successfully tested and analyzed with respect...
Power and substrate domains are strategically isolated or unified in heterogeneous 3D integration. In-tier probing circuitry provides accessibility to power delivery and substrate networks in a deep tier of a 3D chip stack and capability of diagnosing intra/inter tier coupling. A two-tier demonstrator was successfully tested in a 130 nm CMOS, 3D-SIC Cu TSV technology.
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