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Two planar Ge‐based MOSFET structures were analysed for n‐ and p‐type transistors with tensile and compressive strain implemented in the <110> channel direction using source/drain stressors. Strain profiles measured by nano‐beam diffraction (NBD) have been compared with Sentaurus process simulations. The TCAD simulations were tuned with the actual process using NBD measurements, resulting in...
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