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In this paper we explore the use of a set of novel design metrics for characterizing the impact of gate oxide tunneling current in nanometer CMOS devices and perform Monte Carlo simulations to analyze the effects of variations of Tox and VDDon the statistical distribution of these metrics. We concentrate on 3 different unique quantities: (i) steady-state ON current (ION); (ii) Steady-state OFF current...
The authors present minimization methodologies and an algorithm for simultaneous scheduling, binding, and allocation for the reduction of total power and power fluctuation during behavioral synthesis. We consider resources of dual gate oxide thicknesses, dual threshold voltage, and dual power supply. Statistical variations in these parameters are explicitly taken into account by using Monte Carlo...
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