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This paper presents a broadband frequency doubler chip working in the WR-03 band (220–325 GHz). The chip is implemented in a 130-nm SiGe BiCMOS technology with an of 250/300 GHz. It consists of an integrated high-gain wideband amplifier to drive the frequency doubler. The doubler is based on a cascode push-push topology. Conversion loss of the doubler is reduced by utilizing an inductive feedback...
This letter presents the design of a 160 GHz cascode based differential power amplifier (PA) realized in a 130 nm SiGe BiCMOS technology. It consists of 4 driving stages and an output power stage, providing a peak differential gain of 30 dB and a 3-dB small-signal bandwidth of around 50 GHz. Gain is enhanced by means of inductive positive feedback in the common-base stage. By using optimally sized...
A high-gain, wideband power amplifier (PA) in 0.18-μm SiGe HBT technology covering the three high-speed E-band communication channels (71–76 GHz, 81–86GHz and 92–95 GHz) is presented. The architecture is based on a class-A three stage cascode amplifier. Bandwidth enhancement is achieved using inter-stage lossy-matching and gain-staggering techniques. The PA demonstrates a peak small-signal gain of...
This paper investigates the performance of two differential power amplifiers that were designed for automotive radar applications at 79 GHz and fabricated in two different SiGe:C processes. One process is Infineon's high-speed SiGe:C commercial process B7HF200, and the other one is an advanced generation derived from it. They provide heterojunction bipolar transistors with maximum oscillation frequencies...
For 77-GHz automotive radar applications, a monolithic frequency multiplier with a multiplication factor of 18 is presented. The main circuit of the multiplier chain consists of two frequency tripler and one doubler. Additionally interstage amplifiers and filters are integrated in a 200-GHz SiGe:C production technology. The output power is -1dBm for a wide input power range (-20dBm - +8 dBm) at room...
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