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We fabricated a double micro-ring-resonator wavelength-selective filter using the waveguide fabricated by the intermixing of InAs/InGaAlAs quantum dots grown on an InP (311)B substrate. Intermixing was done by using ICP-RIE etching and annealing technique at a low temperature of 650°C. The output-power contrasts of the device were 9.0 dB and 8.6 dB for TE and TM modes, respectively.
We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.
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