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Underlap Double Gate MOSFET with Gate Stack architectures show better performance for its enhanced immunity to short channel effects. In this work, the Underlap Double Gate MOSFET with Gate Stack having symmetric and asymmetric source drain configurations have been compared for improved subthreshold analog performance in the 32nm gate length regime. Using the data obtained from 2D numerical simulator...
It is presently established that Double Gate MOSFET has better immunity to SCE. However in underlap MOSFET structure on current reduced significantly. Graded Channel Double Gate MOSFET (GC DG MOSFET) with Gate Stack architectures show better performance for its enhanced immunity to short channel effects. In this work, low-high and high-low channel doping of the Double Gate MOSFET with Gate Stack configurations...
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