The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have fabricated NbTiN/Al–AlNX/NbTiN Josephson tunnel junctions on thermally oxidized Si substrates for their applications to single-flux-quantum circuits operating around 10 K. NbTiN films with a critical temperature $T_{c}$ of 14.2 K and a root-mean-square value of their surface roughness of 0.45 nm were used as junction electrodes. For a junction barrier, radical-nitrided AlNX was used to realize...
We have fabricated NbTiN tunnel junctions by introducing a Hf overlayer to a junction barrier layer. Two types of junctions consisting of NbTiN/Hf/Al- AlNx/NbTiN and NbTiN/Hf-HfOx/NbTiN were fabricated on thermally oxidized Si substrates. The electrical characteristics for junctions with various thickness of the Hf layer were evaluated at 4.2 K and compared. The results indicated that the diffusion...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.