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Active cycling of power devices operated in harsh conditions causes high power dissipation, resulting in critical electrothermal and thermo-mechanical effects that may lead to catastrophic failures. This paper analyzes the ageing-induced degradation of the chip metallization of a power MOSFET and its impact on the device robustness during short-circuit and unclamped inductive switching tests. A 3-D...
This paper proposes a thorough experimental characterization of the performance of commercially available SiC Power MOSFETs under short-circuit conditions. The purpose is to assess and understand the degradation process and the failure mechanisms that limit device reliability to identify optimal routes for subsequent technology development. This paper complements electro-thermal functional tests with...
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