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We have performed statistical atomistic simulations with tight-binding approach to investigate the effects of randomly distributed mono-vacancy defects in metallic single-walled carbon nanotube (SWCNT) interconnects. We also extracted defective resistances from the atomistic simulations and performed circuit- level simulations to compare the performance of interconnects with and without defects. We...
Carbon nanotubes (CNTs) due to their unique mechanical, thermal and electrical properties are being investigated as promising candidate material for on-chip and off-chip interconnects. The attractive mechanical properties of CNTs, including high Youngs modulus, resiliency and low thermal expansion coefficient offer great advantage for reliable and strong interconnects, and even more so for on-chip...
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