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We demonstrate experimentally a fundamentally new low-loss silicon nanophotonic in-plane crossing. The crossing operation uses a three-mode synthesis of a 1-D Gaussian beam. The measured loss is 0.007 dB ± 0.004 dB, which is the lowest reported loss for silicon waveguide crossings.
Silicon waveguide crossings using multi-mode interferometers are highly sensitive to geometry at the internal corners. Optical proximity correction was developed using design-of-experiments without sophisticated foundry modeling. This simple technique improved loss by a factor of 2, to <30 mdB, while maintaining flatness over C-band.
This paper reports experimental results on compact, low-loss and broadband optical waveguide crossing structures fabricated in a CMOS-compatible process. Insertion loss of 0.11 dB/crossing and crosstalk below −45 dB are achieved in devices with 6.5 × 6.5 μm2 footprint.
Experimental results of 1×2 and 2×2 carrier-injection Mach-Zehnder switch cells fabricated on a commercial multi-project wafer are reported. The performance of the devices is compared to targets determined by system architecture.
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