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A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high- power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at Vgs = -4 V and Vds = 50 V and a maximum power added efficiency of 51.5% at Vgs = -4 V...
The Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated with DC, S, and LS measurements. Special attention was paid to improve the management of harmonics and to provide a more physical treatment of the dispersion. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.
A general purpose LS model for GaN and SiC FET devices was developed and evaluated with DC, S, and large signal measurements (LS). The FET model is generalized and extended with new feature in order to improve the management of harmonics, provide a more physical treatment of the dispersion as well as delay and model other specific effects in these devices. The model was implemented in a commercial...
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