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Reconfigurable field-effect transistors (RFETs) are of interest as devices for dynamically switching between n- and p-type polarity which enables different logic computations using the same hardware. So far, RFETs have been realized with one or even two additional program gates for accomplishing reconfigurability. This paper presents an RFET design with just one single-gate on a silicon nanowire channel...
Detailed formulations for DC and AC emitter current crowding are presented in view of developing an extended π-equivalent circuit (EC) model to accurately predict the lateral non-quasi-static effects in silicon germanium heterojunction bipolar transistors. Under negligible DC current crowding, the EC reduces to a simple π-model. The implementation-suitable versions of the models are also developed...
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