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Sharp edge definition of annealed ohmic contacts is of great concern in AlGaN/GaN high electron mobility transistors (HEMTs) because it is strongly associated with breakdown voltage uniformity and reliability. In this reported work, two-step sequential annealing in conjunction with a low-damage SiNx dry etching technique was employed in a prepassivation process in order to improve the edge acuity...
Inductively coupled plasma as a high density plasma source and Cl2 as main process gas are tested for etching of Pt thin films. Optical emission spectra show the possible compound formation of Pt with Cl, which is an evidence of ion-assisted chemical reaction. Addition of oxygen to Cl2 plasma enhances the selectivity to hard SiO2 mask to more than 2.0 while maintaining Pt etch rate higher than 200...
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