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Record-low contact resistivity (pc) for n-Si, down to 1.5×10−9 Q-cm2, is achieved on Si:P epitaxial layer. We confirm that Ti silicidation reduces the pc for n-Si, while an additional Ge pre-amorphization implantation (PAI) before Ti silicidation further extends the pc reduction. In situ doped Si:P with P concentration of 2×1021 cm−3 is used as the substrate, and dynamic surface anneal (DSA) boosts...
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