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Since 3D NAND flash memory could provide more reliable storage than a 2D planar flash memory by relaxing the design rule of a memory cell, a kind of brand new programming technique, namely erase-free scheme, has been proposed to further enhance the endurance of a 3D SLC NAND flash memory. The erase-free scheme brings tons of benefits to flash memory performance and endurance. For example, the erase-free...
Recently, phase change memory (PCM) has become a promising candidate to replace dynamic RAM as main memory due to its low power consumption, fast I/O performance, and byte addressability. Accompanied with the merits, the adoption of PCM may suffer from its physical characteristic of limited write endurance. Wear leveling is a well-known approach to address this issue. For PCM main memory, the design...
3D NAND has been proposed to provide a large capacity storage with low-cost consideration due to its high density memory architecture. However, 3D NAND needs to consume enormous time for garbage collection because of live-page copying overhead and long block erase time. To alleviate the impact of live-page copying on the performance of 3D NAND, a sub-block erase design has been designed. With sub-block...
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