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In this letter, we report a record gate delay of 1.65 ps of a current-mode logic ring oscillator (RO) fabricated with an advanced SiGe:C heterojunction bipolar transistor technology. Outstanding performance has been achieved through process and layout optimization and inductive peaking in series with the load resistor. The RO operates at a single-ended voltage swing of 200 mV. The transistors used...
This paper presents an overview of the millimeter-wave dedicated 130 nm SiGe BiCMOS technology used by STMicroelectronics as a starting point for DOTFIVE Project developments, and achievements during the first two years of the Project, which culminate in the demonstration of an intermediate 400 GHz fMAX SiGe HBT process, with good device control and reproducibility.
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