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The efficiency of 17.8% on a 30 × 30cm2-sized Cu(In,Ga)(Se,S)2 (CIS)-based thin-film submodule was achieved. The device structure is same as our previous works; monolithically integrated CIS-based cells on a Mo-deposited glass substrate with a Zn(O, S, OH)x buffer and a ZnO window. Current Progress was mainly brought by review of the band profile of the absorber layer. More specifically, fine tuning...
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