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This letter investigates the switching behavior of TaN/Al2O3:Ag:ZnO/ITO memristors fabricated on flexible substrates, for flexible nonvolatile memory and neuromorphic computing applications. The embedded Ag nanoparticles provide for improved device yield and reduced variability in resistance, from more than 160% to 30%. They also provide for reduced variability in set and reset voltages, from 35%...
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