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Benefiting from the good etching and patterning feasibilities and excellent electrical properties, platinum silicide attracts renewed attention as a suitable candidate for the next generation complementary metal-oxide-semiconductor (CMOS) technologies recently. This work focuses on the effects of the trimethylaluminum (TMA) pretreatment on the Plasma Enhanced Atomic Layer Deposition (PEALD) growth...
The effect of NH3 annealing on the chemical properties and thermal stability of ultrathin HfO2/Al2O3 film grown on silicon substrate by atomic layer deposition are investigated as a function of post deposition annealing temperature. X-ray photoelectron spectroscopy shows that nitrogen incorporation can be approached by a NH3 annealing treatment and its composition evidently increases after annealing...
The effect of rapid thermal annealing temperature on the structural and electrical properties thin ZnO films grown on GaAs substrate by atomic layer deposition is thoroughly investigated. X-ray diffraction analysis show that atoms interdiffusion can be observed at the interface of ZnO/GaAs heterostructures after annealing in oxygen ambience at elevated temperatures. Moreover, the conductivity of ZnO...
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