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Coupled inductor has been widely adopted in VR applications for many years because of its benefits such as reducing current ripple and improving transient performance. In this presentation, coupled inductor concept is applied to interleaved MHz totem-pole CRM PFC converter with GaN devices. The coupled inductor in CRM PFC converter can reduce switching frequency variation, help achieving ZVS and reduce...
This paper presents the evaluation of high-voltage cascode gallium nitride (GaN) high-electron-mobility transistors (HEMT) in different packages. The high-voltage cascode GaN HEMT in traditional package has high turn-on loss in hard-switching turn-on condition, and severe internal parasitic ringing, which could possibly damage the gate of GaN HEMT, in hard-switching turn-off condition, due to package...
This paper presents the development of a simulation model for high-voltage gallium nitride (GaN) high-electron-mobility transistors (HEMT) in a cascode structure. A method is proposed to accurately extract the device package parasitic inductance, which is of vital importance to better predict the high-frequency switching performance of the device. The simulation model is verified by a double-pulse...
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