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Variable-range-hopping through dislocations was identified as the main off-state leakage mechanism for GaN vertical diodes on different substrates. The behavior of leakage current for vertical devices as a function of dislocation density and electric field was derived by TCAD simulations, after careful calibration with experiments and literature data. Designed GaN vertical diodes demonstrate 2–4 orders...
We present a detailed analysis of substrate bias (Vbb) impact on gate induced drain leakage (GIDL) for thin-BOX extremely thin silicon-on-insulator (ETSOI) with BOX thickness (TBOX) ranging from 10 to 50 nm and inversion layer thicknesses (TINV) ranging from 1.1 to 1.3 nm. The GIDL behavior for thin-BOX under various substrate biases (Vbb) and partially depleted SOI (PDSOI) devices with different...
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