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The deposition of thin Hafnia (HfO 2 ) films on crystalline Si by photo-induced chemical vapour deposition (CVD) using 222 nm excimer lamps at temperatures between 300 and 450 o C is presented. Hafnium (IV) tetra-t-butoxide was used as the precursor, which was carried into the photochemical reaction chamber by flowing Ar carrier gas at a pressure of several mbar using a special precursor...
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