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Wide bandgap materials such as SiC and GaN are regarded as second and third generations of semiconductors with potential to displace silicon in future power electronic applications. Simulation of wide bandgap devices within the framework of drift-diffusion theory poses unique challenges which we shall address in this paper. For SiC, we tackle the issue of numerical convergence at low temperatures...
Based on Crosslight APSYS, we have studied InGaN PIN solar cells with the effects of defect traps and piezoelectric polarization interface charges. The defect traps and the piezoelectric polarization interface charges both show adverse influences to the cell performance and high interface charge density deteriorates the fill factor dramatically. The results indicate that piezoelectric polarization...
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