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In this paper, we study the effect of polarization on the performance of InGaN solar cells. By using the APSYS software, we show that device performance is adversely affected due to the interface charges near GaN contact layers and that alternate means of creating ohmic contacts should be considered.
We report on the 2D simulations of electrical and optical characteristics for green color InGaN/GaN multiple quantum well light-emitting diodes by the APSYS software. The In-rich quantum dot-like structure in InGaN/GaN multiple quantum wells has been considered with quantum dot model. The simulation results are in good agreement with experiment and indicate that quantum dot spontaneous emission and...
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