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Medium-voltage (MV) silicon carbide (SiC) devices such as the 15-kV SiC N-insulated gate bipolar transistor (IGBT) have better thermal withstanding capability compared with silicon (Si)-based devices. These devices also have lower switching and conduction losses at high switching frequencies and high power levels, respectively. The maximum safe operating junction temperature for the 15-kV SiC IGBT...
The development of the high voltage wideband gap semiconductor SiC power devices has enabled the solid state transformer (SST) technology in connecting a medium voltage grid to a low voltage grid. Though, these power devices have superior loss and switching characteristics compared to Si power devices, they have limited inrush current handling capability. The large inrush currents that flow into the...
The Transformerless Intelligent Power Substation (TIPS) is being developed as an alternative to the conventional line frequency transformers at the 13.8 kV distribution grid − 480 V utility grid interface. The Front End Converter (FEC) of TIPS is composed of newly developed 15 kV/ 20 A Silicon Carbide (SiC) IGBTs and series connected 10 kV/ 10 A SiC Junction Barrier Schottky (JBS) diodes. The low...
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