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Phase-change memory (PCM) is the best candidate for the storage device of next-generation mobile consumer electronics. PCM has the potential to replace NAND flash memory, due to its non-volatility, in-place programmability, and low power consumption. Even though the lifetime of PCM is longer than that of flash memory, wear leveling is still required to cope with the non-uniformity of storage workload...
The NAND flash memory based SSDs are considered to replace the existing HDDs. But the disadvantage of SSD is degradation of write performance. Because a write in flash memory should be preceded by an erase operation, a write performance is reduced. To maximize the write performance, SSD is used with the TRIM command. NTFS and EXT4 are known to support TRIM. This paper is compared by a write performance...
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