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This paper reports the doping properties of polycrystalline silicon (poly-Si) deposited by atmospheric pressure plasma enhanced chemical transport and its application to a piezo-resistive pressure sensor. The doping is done by the chemical transport of dopants in Si sources. The structural and electronic properties reveal that most of the dopants are chemically transported at the same rate as the...
We investigated the doping properties of polycrystalline silicon (poly-Si) deposited by atmospheric pressure plasma enhanced chemical transport and fabricated a strain gauge with the doped poly-Si film. The doping was done by the chemical transport of the dopant in Si sources. The electronic properties reveal that most of the dopants were transported as Si atoms. A strain gauge was fabricated with...
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