The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper demonstrates, for the first time, a high density, low cost redistribution layer (RDL) stack-up using a novel, ultra-thin dry film photosensitive dielectric material for panel scale 2.5D glass interposers and fan-out packages. The salient features of this semi-additive process based RDL demonstrator include: (1) A two metal layer RDL structure with integration of 5 µm microvias at 20 µm...
A suite of highly precise surface planarization equipment and associated unit process have been developed for several years. Recent studies showed that this process is suitable to address the persistent needs for improved planarity of surface topographies and bonding interfaces during advanced packaging fabrications and assembly. Myriad process capabilities have been achieved to date on both wafer-level...
In this paper, a large 2.5D glass interposer is demonstrated with 50 um chip-level interconnect (FLI), 3/3 um line and space (L/S) escape routing, and six metal layers, which are targeted for JEDEC high bandwidth memory (HBM). Our routing design suggests that double sided panel processing with 3/3 um L/S can accommodate required signal lines for HBM. Then, 3/3 um L/S transmission lines on 25mm × 30mm...
Electromigration resistance of Al could be improved through adding a small amount of Cu elements. In this paper, Al31Cu supercell was constructed to calculate the effects of the solute elements on the properties of face central cubic (FCC) Al, including the diffusion activation energy, electronic structure etc, to explain why Cu can suppress the EM process occurred in pure Al interconnect, by employing...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.