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Stress effects in semiconductor devices have gained significant attention in semiconductor industry in recent years, and numerical modeling is often used as a powerful tool for stress analysis in semiconductor devices. Here, we present a nontraditional 1D model for fast stress analysis in bipolar junction transistors. Because bipolar transistors are operationally 1D devices, it is possible to speed...
The macroscopic stress dependence of bipolar junction transistors (BJTs) can be modeled by three transport model parameters as a function of stress: saturation current IS, forward current gain βF, and Early voltage VA. Recent research has shown that Early voltage VA is independent of stress, so it is not discussed in detail in this paper. Unfortunately, accurate extraction of model parameters IS and...
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