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Operation of AlGaN/GaN HFETs in space was simulated by irradiation with protons and heavy ions at 68 MeV and 2MeV and fluences up to 1013 cm-2. Before and after irradiation dc and pulsed I-V characteristics of the AlGaN HFET devices were measured. A thick GaN reference layer was characterized by photoluminescence, X-ray diffraction and Hall measurements before and after irradiation. The results of...
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