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We present the first reliability study of InAs/GaAs self-assembled quantum dot lasers epitaxially grown on Ge/Si substrates. Some devices maintain lasing oscillation after more than 2700 h of constant current stress at 30 °C, longer than any previous life tests of GaAs lasers epitaxially grown on silicon. No catastrophic failures were observed. The lasers were characterized to gain insight on the...
High voltage HFET's fabricated from nitride semiconductors utilizing the AlGaN/GaN heterojunction demonstrate excellent RF performance with RF output power greater than an order of magnitude higher than available from GaAs and InP based devices. However, the nitride devices demonstrate a reliability problem where the dc current and RF output power continually decrease as a function of time. The reliability...
HFET's fabricated from nitride-based wide bandgap semiconductors can produce RF output power greater than an order of magnitude compared to devices fabricated from traditional semiconductors such as GaAs and InP. Nitride-based HFET's can support drain bias voltages in the range of 40-50 V, and have been biased as high as 120 V using device designs that make use of field-plate technology. However,...
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